SPP04N50C3HKSA1
- Mfr.Part #
- SPP04N50C3HKSA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET N-CH 560V 4.5A TO220-3
- Stock
- 313
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Phone:
- * Comment:
- * Quantity:
- * Captcha:
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A (Tc)
- Drain to Source Voltage (Vdss) :
- 560 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 470 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 50W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 950mOhm @ 2.8A, 10V
- Supplier Device Package :
- PG-TO220-3-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.9V @ 200µA
- Datasheets
- SPP04N50C3HKSA1
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SPP02N60C3 | Infineon Technologies | 74,534 | N-CHANNEL POWER MOSFET |
SPP02N60C3HKSA1 | Infineon Technologies | 592 | MOSFET N-CH 650V 1.8A TO220-3 |
SPP02N60C3IN | Infineon Technologies | 217 | N-CHANNEL POWER MOSFET |
SPP02N60C3XKSA1 | Infineon Technologies | 285 | LOW POWER_LEGACY |
SPP02N60S5 | Infineon Technologies | 5,264 | N-CHANNEL POWER MOSFET |