IMT65R022M1HXUMA1
- Mfr.Part #
- IMT65R022M1HXUMA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- Download
- Description
- SILICON CARBIDE MOSFET
- Stock
- 593
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- FET Feature :
- -
- FET Type :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -
- Package / Case :
- 8-PowerSFN
- Power Dissipation (Max) :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- PG-HSOF-8-1
- Technology :
- SiC (Silicon Carbide Junction Transistor)
- Vgs (Max) :
- -
- Vgs(th) (Max) @ Id :
- -
- Datasheets
- IMT65R022M1HXUMA1