SQJ401EP-T1_GE3
- Mfr.Part #
- SQJ401EP-T1_GE3
- Manufacturer
- Vishay
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 32A PPAK SO-8
- Stock
- 795
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Phone:
- * Comment:
- * Quantity:
- * Captcha:
-
- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 32A (Tc)
- Drain to Source Voltage (Vdss) :
- 12 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 164 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10015 pF @ 6 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Power Dissipation (Max) :
- 83W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 15A, 4.5V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Datasheets
- SQJ401EP-T1_GE3
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SQJ401EP-T2_GE3 | Vishay | 642 | MOSFET P-CH 12V 32A PPAK SO-8 |
SQJ402EP-T1_BE3 | Vishay | 697 | N-CHANNEL 100-V (D-S) 175C MOSFE |
SQJ402EP-T1_GE3 | Vishay | 360 | MOSFET N-CH 100V 32A PPAK SO-8 |
SQJ403BEEP-T1_BE3 | Vishay | 575 | P-CHANNEL 30-V (D-S) 175C MOSFET |
SQJ403BEEP-T1_GE3 | Vishay | 717 | MOSFET P-CH 30V 30A PPAK SO-8 |