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- Transistors - IGBTs - Modules
- Infineon Technologies
- Configuration : Half Bridge
- Voltage - Collector Emitter Breakdown (Max) : 1200 V
- Current - Collector Cutoff (Max) : 1 mA
- Operating Temperature : -40°C ~ 150°C (TJ)
- Product Status : Obsolete
- Current - Collector (Ic) (Max) : 100 A
- Power - Max : 390 W
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Infineon Technologies |
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729
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