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Transistors - IGBTs - Modules
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Transistors - IGBTs - Modules
Voltage - Collector Emitter Breakdown (Max) : 1200 V
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C (TJ)
IGBT Type : Trench Field Stop
Power - Max : 208 W
Package / Case : SP1
2 Records
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Part
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Description
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APTGT35A120T1G
Microchip Technology
IGBT MODULE 1200V 5...
$58.0350
PDF
RFQ
610
In-stock
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APTGT35H120T1G
Microsemi
IGBT MODULE 1200V 5...
-
PDF
RFQ
295
In-stock
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APTGT35A120T1G
Microchip Technology
IGBT MODULE 1200V 55A 208W SP1
Stock : 610
$58.0350
RFQ
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APTGT35H120T1G
Microsemi
IGBT MODULE 1200V 55A 208W SP1
Stock : 295
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