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- Transistors - IGBTs - Modules
- Package / Case : Module
- Operating Temperature : -40°C ~ 150°C (TJ)
- Configuration : Half Bridge
- Voltage - Collector Emitter Breakdown (Max) : 1200 V
- IGBT Type : -
- Current - Collector (Ic) (Max) : 450 A
- Input Capacitance (Cies) @ Vce : 45 nF @ 10 V
- Mounting Type : Chassis Mount
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