- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Frequency - Transition : 250 MHz
- Transistor Type : NPN - Pre-Biased
- Product Status : Active
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Supplier Device Package : S-Mini
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
11 Records
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Toshiba Electronic Devices and Storage Corporation |
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7,044
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Toshiba Electronic Devices and Storage Corporation |
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2,800
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Toshiba Electronic Devices and Storage Corporation |
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14
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Toshiba Electronic Devices and Storage Corporation |
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247
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Toshiba Electronic Devices and Storage Corporation |
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288
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Toshiba Electronic Devices and Storage Corporation |
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403
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Toshiba Electronic Devices and Storage Corporation |
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233
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Toshiba Electronic Devices and Storage Corporation |
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505
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Toshiba Electronic Devices and Storage Corporation |
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289
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Toshiba Electronic Devices and Storage Corporation |
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729
In-stock
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RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
-
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728
In-stock
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Get Quote |