- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Resistor - Emitter Base (R2):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Frequency - Transition : 250 MHz
- Transistor Type : NPN - Pre-Biased
- Product Status : Active
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Supplier Device Package : S-Mini
- Resistor - Base (R1) : 2.2 kOhms
5 Records
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Toshiba Electronic Devices and Storage Corporation |
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1,629
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Toshiba Electronic Devices and Storage Corporation |
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247
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Toshiba Electronic Devices and Storage Corporation |
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588
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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403
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
446
In-stock
|
RFQ Get Quote |