- Package / Case:
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- Power - Max:
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- Supplier Device Package:
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- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Frequency - Transition : 250 MHz
- Transistor Type : NPN - Pre-Biased
- Product Status : Active
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Resistor - Base (R1) : 22 kOhms
- Resistor - Emitter Base (R2) : 22 kOhms
7 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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5,900
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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2,740
In-stock
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RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
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2,999
In-stock
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RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
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118
In-stock
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RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
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629
In-stock
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RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
421
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
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174
In-stock
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Get Quote |