- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Frequency - Transition : 250 MHz
- Transistor Type : NPN - Pre-Biased
- Product Status : Active
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Power - Max : 200 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
4 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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629
In-stock
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RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
577
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
443
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
421
In-stock
|
RFQ Get Quote |