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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
(1)
56 @ 5mA, 5V
(1)
68 @ 5mA, 5V
(1)
Resistor - Emitter Base (R2):
-
(1)
22 kOhms
(1)
47 kOhms
(1)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
(1)
300mV @ 500µA, 10mA
(2)
Voltage - Collector Emitter Breakdown (Max):
40 V
(1)
50 V
(2)
Filter:
Transistors - Bipolar (BJT) - Single, Pre-Biased
onsemi
Frequency - Transition : 250 MHz
Power - Max : 200 mW
Supplier Device Package : SOT-23-3
Resistor - Base (R1) : 22 kOhms
3 Records
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