- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Frequency - Transition : 200 MHz
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Power - Max : 200 mW
- Transistor Type : PNP - Pre-Biased
- Resistor - Base (R1) : 4.7 kOhms
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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153
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
703
In-stock
|
RFQ Get Quote |