- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Frequency - Transition : 200 MHz
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Emitter Base (R2) : 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 10mA, 5V
- Power - Max : 100 mW
- Supplier Device Package : SSM
- Resistor - Base (R1) : 47 kOhms
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
Toshiba Electronic Devices and Storage Corporation |
|
523
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
565
In-stock
|
RFQ Get Quote |