- Package / Case:
-
- Power - Max:
-
- Resistor - Base (R1):
-
- Supplier Device Package:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Frequency - Transition : 200 MHz
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Product Status : Obsolete
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Resistor - Emitter Base (R2) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
-
|
257
In-stock
|
Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
-
|
564
In-stock
|
Get Quote |