- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- onsemi
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Frequency - Transition : 250 MHz
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 300 mW
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Resistor - Emitter Base (R2) : 47 kOhms
5 Records