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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
(1)
68 @ 5mA, 5V
(1)
Resistor - Emitter Base (R2):
10 kOhms
(1)
47 kOhms
(1)
Filter:
Transistors - Bipolar (BJT) - Single, Pre-Biased
onsemi
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250 MHz
Voltage - Collector Emitter Breakdown (Max) : 50 V
Power - Max : 300 mW
Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Resistor - Base (R1) : 10 kOhms
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FJN3306RTA
onsemi
TRANS PREBIAS NP...
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126
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FJN3302RTA
onsemi
TRANS PREBIAS NP...
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235
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FJN3306RTA
onsemi
TRANS PREBIAS NPN 300MW TO92-3
Stock : 126
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FJN3302RTA
onsemi
TRANS PREBIAS NPN 0.3W TO92-3
Stock : 235
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