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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce：
100 @ 5mA, 5V
(1)
30 @ 5mA, 5V
(1)
Resistor - Emitter Base (R2)：
10 kOhms
(1)
47 kOhms
(1)
Vce Saturation (Max) @ Ib, Ic：
100mV @ 250µA, 5mA
(1)
100mV @ 500µA, 10mA
(1)
Filter：
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector Cutoff (Max) : 100nA
Mounting Type : Surface Mount, Wettable Flank
Power - Max : 340 mW
Resistor - Base (R1) : 10 kOhms
Transistor Type : NPN - Pre-Biased
2 Records
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Part
Manufacturer
Description
Price
Stock
Action
PDTC114EQB-QZ
Nexperia
PDTC114EQB-Q/SOT801...
$0.3000
PDF
RFQ
5,000
In-stock
RFQ
Get Quote
PDTC114YQB-QZ
Nexperia
PDTC114YQB-Q/SOT801...
$0.3000
PDF
RFQ
4,900
In-stock
RFQ
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PDTC114EQB-QZ
Nexperia
PDTC114EQB-Q/SOT8015/DFN1110D-
Stock : 5,000
$0.3000
RFQ
RFQ
PDTC114YQB-QZ
Nexperia
PDTC114YQB-Q/SOT8015/DFN1110D-
Stock : 4,900
$0.3000
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