- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector Cutoff (Max) : 500nA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Power - Max : 200 mW
- Transistor Type : PNP - Pre-Biased
4 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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2,651
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
661
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
153
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
703
In-stock
|
RFQ Get Quote |