- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector Cutoff (Max) : 500nA
- Mounting Type : Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Power - Max : 200 mW
- Transistor Type : NPN - Pre-Biased
- Product Status : Obsolete
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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629
In-stock
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