- Package / Case:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Current - Collector Cutoff (Max) : 500nA
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 10 kOhms
- Power - Max : 100 mW
- Resistor - Base (R1) : 4.7 kOhms
5 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
6,640
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
160
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
516
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
800
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
73
In-stock
|
RFQ Get Quote |