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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector (Ic) (Max) : 100 mA
- Current - Collector Cutoff (Max) : 500nA
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Transistor Type : NPN - Pre-Biased
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Product Status : Discontinued at Digi-Key
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Toshiba Electronic Devices and Storage Corporation |
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