- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Resistor - Emitter Base (R2):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Current - Collector Cutoff (Max) : 500nA
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Transistor Type : NPN - Pre-Biased
- Package / Case : SC-75, SOT-416
- Supplier Device Package : SSM
- Resistor - Base (R1) : 2.2 kOhms
4 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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718
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
7
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
100
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
194
In-stock
|
RFQ Get Quote |