- Package / Case:
-
- Power - Max:
-
- Product Status:
-
- Supplier Device Package:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector (Ic) (Max) : 100 mA
- Current - Collector Cutoff (Max) : 500nA
- Transistor Type : NPN - Pre-Biased
- Frequency - Transition : 250 MHz
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Resistor - Base (R1) : 10 kOhms
7 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
|
5,824
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
2,601
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
1,478
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
704
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
597
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
559
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
-
|
567
In-stock
|
Get Quote |