- DC Current Gain (hFE) (Min) @ Ic, Vce:
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- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector (Ic) (Max) : 100 mA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 4.7 kOhms
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Transistor Type : PNP - Pre-Biased
- Frequency - Transition : 250 MHz
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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347
In-stock
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RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
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182
In-stock
|
RFQ Get Quote |