- Manufacturer:
-
- Current - Collector Cutoff (Max):
-
- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Frequency - Transition:
-
- Package / Case:
-
- Power - Max:
-
- Supplier Device Package:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 4.7 kOhms
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Transistor Type : PNP - Pre-Biased
- Product Status : Active
- Resistor - Emitter Base (R2) : -
4 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Infineon Technologies |
|
54,000
In-stock
|
RFQ Get Quote | |||
![]() |
Infineon Technologies |
|
270,000
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
347
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
182
In-stock
|
RFQ Get Quote |