- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Transistor Type : NPN - Pre-Biased
- Frequency - Transition : 250 MHz
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Mounting Type : Surface Mount
- Supplier Device Package : S-Mini
5 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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5,824
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
2,601
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
135
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
704
In-stock
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Toshiba Electronic Devices and Storage Corporation |
|
756
In-stock
|
RFQ Get Quote |