- Manufacturer:
-
- Frequency - Transition:
-
- Package / Case:
-
- Supplier Device Package:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Transistor Type : NPN - Pre-Biased
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 150 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Resistor - Base (R1) : 2.2 kOhms
10 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
26,178
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
23,885
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
8,000
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
284
In-stock
|
RFQ Get Quote | |||
![]() |
Diodes Incorporated |
|
146
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
3,000
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
|
174
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
-
|
281
In-stock
|
Get Quote | |||
![]() |
Diodes Incorporated |
|
770
In-stock
|
RFQ Get Quote | |||
![]() |
ROHM Semiconductor |
-
|
508
In-stock
|
Get Quote |