- Product Status:
-
- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector (Ic) (Max) : 100 mA
- Transistor Type : NPN - Pre-Biased
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 150 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
11 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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26,178
In-stock
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RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
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31,576
In-stock
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RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
8,000
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
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3,150
In-stock
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RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
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608
In-stock
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RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
574
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
|
8,000
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
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371
In-stock
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RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
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167
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
-
|
281
In-stock
|
Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
-
|
339
In-stock
|
Get Quote |