- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Transistor Type : NPN - Pre-Biased
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 150 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
2,525
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
741
In-stock
|
RFQ Get Quote |