- Manufacturer:
-
- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Package / Case:
-
- Supplier Device Package:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Transistor Type : NPN - Pre-Biased
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 150 mW
- Resistor - Emitter Base (R2) : 100 kOhms
- Product Status : Active
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation |
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334
In-stock
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ROHM Semiconductor |
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180
In-stock
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Diodes Incorporated |
-
|
732
In-stock
|
Get Quote |