- Package / Case:
-
- Power - Max:
-
- Supplier Device Package:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Transistor Type : NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Resistor - Emitter Base (R2) : 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Product Status : Active
- Resistor - Base (R1) : 10 kOhms
5 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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5,824
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
2,601
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
1,478
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
704
In-stock
|
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Toshiba Electronic Devices and Storage Corporation |
|
559
In-stock
|
RFQ Get Quote |