- Current - Collector Cutoff (Max):
-
- Frequency - Transition:
-
- Transistor Type:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Emitter Base (R2) : 47 kOhms
- Resistor - Base (R1) : 2.2 kOhms
- Power - Max : 150 mW
- Product Status : Active
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
6 Records
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Toshiba Electronic Devices and Storage Corporation |
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Toshiba Electronic Devices and Storage Corporation |
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Toshiba Electronic Devices and Storage Corporation |
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272
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Toshiba Electronic Devices and Storage Corporation |
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281
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Toshiba Electronic Devices and Storage Corporation |
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168
In-stock
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