- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Resistor - Emitter Base (R2) : -
- Frequency - Transition : 250 MHz
- Power - Max : 200 mW
- Transistor Type : NPN - Pre-Biased
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Supplier Device Package : S-Mini
- Resistor - Base (R1) : 22 kOhms
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
2,900
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
1,850
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
|
640
In-stock
|
RFQ Get Quote |