- Frequency - Transition:
-
- Transistor Type:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Product Status : Active
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Power - Max : 200 mW
- Resistor - Base (R1) : 47 kOhms
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
5 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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288
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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Toshiba Electronic Devices and Storage Corporation |
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729
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Toshiba Electronic Devices and Storage Corporation |
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728
In-stock
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Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
-
|
323
In-stock
|
Get Quote |