- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Power - Max : 250 mW
- Transistor Type : NPN - Pre-Biased
- Current - Collector Cutoff (Max) : 1µA
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- Resistor - Emitter Base (R2) : 22 kOhms
- Supplier Device Package : DFN1006-3
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors |
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120,000
In-stock
|
RFQ Get Quote |