- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Power - Max : 250 mW
- Transistor Type : NPN - Pre-Biased
- Supplier Device Package : TO-236AB
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V
1 Records