- Frequency - Transition:
-
- Resistor - Base (R1):
-
- Transistor Type:
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Mounting Type : Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Resistor - Emitter Base (R2) : 10 kOhms
- Power - Max : 100 mW
- Product Status : Obsolete
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
-
|
251
In-stock
|
Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
-
|
395
In-stock
|
Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
-
|
257
In-stock
|
Get Quote |