- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : PNP - Pre-Biased
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Mounting Type : Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Power - Max : 150 mW
- Product Status : Obsolete
1 Records
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NXP Semiconductors |
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675
In-stock
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RFQ Get Quote |