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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Diodes Incorporated
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 150 mW
- Package / Case : SOT-523
- Current - Collector Cutoff (Max) : 500nA (ICBO)
- Transistor Type : NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 50µA, 500µA
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Diodes Incorporated |
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