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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max):
100 mA
(1)
500 mA
(1)
Current - Collector Cutoff (Max):
1µA
(1)
500nA
(1)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 100mA, 10V
(1)
6 @ 5mA, 10V
(1)
Frequency - Transition:
150 MHz
(1)
200 MHz
(1)
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1.5mA, 10mA
(1)
250mV @ 5mA, 10mA
(1)
Filter:
Transistors - Bipolar (BJT) - Single, Pre-Biased
Voltage - Collector Emitter Breakdown (Max) : 50 V
Package / Case : TO-236-3, SC-59, SOT-23-3
Resistor - Emitter Base (R2) : 2.2 kOhms
Supplier Device Package : Mini3-G1
Transistor Type : NPN - Pre-Biased
2 Records
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Part
Manufacturer
Description
Price
Stock
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UNR221V00L
Panasonic
TRANS PREBIAS NP...
-
PDF
RFQ
641
In-stock
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UNR222100L
Panasonic
TRANS PREBIAS NP...
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PDF
RFQ
259
In-stock
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UNR221V00L
Panasonic
TRANS PREBIAS NPN 200MW MINI3
Stock : 641
RFQ
UNR222100L
Panasonic
TRANS PREBIAS NPN 200MW MINI3
Stock : 259
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