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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce:
56 @ 5mA, 5V
(2)
68 @ 5mA, 5V
(2)
Resistor - Emitter Base (R2):
22 kOhms
(2)
47 kOhms
(2)
Filter:
Transistors - Bipolar (BJT) - Single, Pre-Biased
Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
Resistor - Base (R1) : 47 kOhms
Transistor Type : NPN - Pre-Biased
Power - Max : 300 mW
Supplier Device Package : TO-92S
4 Records
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Part
Manufacturer
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FJNS3208RBU
onsemi
TRANS PREBIAS NP...
-
PDF
RFQ
532
In-stock
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FJNS3204RBU
onsemi
TRANS PREBIAS NP...
-
PDF
RFQ
418
In-stock
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FJNS3204RTA
onsemi
TRANS PREBIAS NP...
-
PDF
RFQ
408
In-stock
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FJNS3208RTA
onsemi
TRANS PREBIAS NP...
-
PDF
RFQ
679
In-stock
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FJNS3208RBU
onsemi
TRANS PREBIAS NPN 300MW TO92S
Stock : 532
RFQ
FJNS3204RBU
onsemi
TRANS PREBIAS NPN 300MW TO92S
Stock : 418
RFQ
FJNS3204RTA
onsemi
TRANS PREBIAS NPN 300MW TO92S
Stock : 408
RFQ
FJNS3208RTA
onsemi
TRANS PREBIAS NPN 300MW TO92S
Stock : 679
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