- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
- Mounting Type : Through Hole
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Emitter Base (R2) : 10 kOhms
- Resistor - Base (R1) : 1 kOhms
- Power - Max : 500 mW
- Transistor Type : NPN - Pre-Biased
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors |
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491
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