- Manufacturer:
-
- Power - Max:
-
- Resistor - Emitter Base (R2):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Type : PNP - Pre-Biased
- Frequency - Transition : 250 MHz
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
- Supplier Device Package : SOT-23-3
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation |
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182
In-stock
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Diodes Incorporated |
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Comchip Technology |
|
129
In-stock
|
RFQ Get Quote |