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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Transistor Type : PNP - Pre-Biased
- Frequency - Transition : 200 MHz
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Resistor - Base (R1) : 2.2 kOhms
- Resistor - Emitter Base (R2) : 47 kOhms
2 Records
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Toshiba Electronic Devices and Storage Corporation |
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159
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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430
In-stock
|
RFQ Get Quote |