- Frequency - Transition:
-
- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Transistor Type : PNP - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Product Status : Active
- Power - Max : 150 mW
- Current - Collector Cutoff (Max) : 500nA
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
8 Records
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Toshiba Electronic Devices and Storage Corporation |
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6,627
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Toshiba Electronic Devices and Storage Corporation |
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3,033
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Toshiba Electronic Devices and Storage Corporation |
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192
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Toshiba Electronic Devices and Storage Corporation |
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519
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Toshiba Electronic Devices and Storage Corporation |
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345
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Toshiba Electronic Devices and Storage Corporation |
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272
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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227
In-stock
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Toshiba Electronic Devices and Storage Corporation |
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377
In-stock
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Get Quote |