- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Power - Max : 150 mW
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
|
700
In-stock
|
RFQ Get Quote | |||
![]() |
Toshiba Electronic Devices and Storage Corporation |
-
|
160
In-stock
|
Get Quote |