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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Transistor Type : PNP - Pre-Biased
- Current - Collector (Ic) (Max) : 100 mA
- Current - Collector Cutoff (Max) : 500nA
- Power - Max : 200 mW
- Resistor - Base (R1) : 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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349
In-stock
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RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
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781
In-stock
|
RFQ Get Quote | |||
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Toshiba Electronic Devices and Storage Corporation |
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564
In-stock
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Get Quote |