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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:
NXP Semiconductors
(1)
onsemi
(2)
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Current - Collector Cutoff (Max):
100nA (ICBO)
(2)
1µA
(1)
Frequency - Transition:
-
(1)
200 MHz
(2)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
(1)
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
(2)
Power - Max:
300 mW
(2)
500 mW
(1)
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
(1)
300mV @ 1mA, 10mA
(2)
Voltage - Collector Emitter Breakdown (Max):
40 V
(2)
50 V
(1)
Filter:
Transistors - Bipolar (BJT) - Single, Pre-Biased
Transistor Type : PNP - Pre-Biased
Current - Collector (Ic) (Max) : 100 mA
Resistor - Base (R1) : 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
3 Records
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Part
Manufacturer
Description
Price
Stock
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FJN4311RBU
onsemi
TRANS PREBIAS PN...
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PDF
RFQ
215
In-stock
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FJN4311RTA
onsemi
TRANS PREBIAS PN...
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PDF
RFQ
223
In-stock
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PDTA124TS,126
NXP Semiconductors
TRANS PREBIAS PN...
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PDF
RFQ
621
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FJN4311RBU
onsemi
TRANS PREBIAS PNP 300MW TO92-3
Stock : 215
RFQ
FJN4311RTA
onsemi
TRANS PREBIAS PNP 300MW TO92-3
Stock : 223
RFQ
PDTA124TS,126
NXP Semiconductors
TRANS PREBIAS PNP 500MW TO92-3
Stock : 621
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