- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Resistor - Base (R1):
-
- Filter:
-
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistor Type : PNP - Pre-Biased
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Resistor - Emitter Base (R2) : -
- Current - Collector Cutoff (Max) : 1µA
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors |
-
|
787
In-stock
|
Get Quote | |||
![]() |
NXP Semiconductors |
-
|
739
In-stock
|
Get Quote |