- Filter:
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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Toshiba Electronic Devices and Storage Corporation
- Transistor Type : PNP - Pre-Biased
- Resistor - Emitter Base (R2) : 4.7 kOhms
- Frequency - Transition : 250 MHz
- Mounting Type : Surface Mount
- Resistor - Base (R1) : 4.7 kOhms
- Current - Collector Cutoff (Max) : 500nA
- Product Status : Active
- Power - Max : 150 mW
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation |
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6,638
In-stock
|
RFQ Get Quote | ||||
Toshiba Electronic Devices and Storage Corporation |
|
8,000
In-stock
|
RFQ Get Quote |